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SHORT STORIES |
There is widespread interest in the growth and characterization of nitride-based wide bandgap semiconductors. Applications of these materials include the fabrication of blue LEDs and lasers that operate in harsh environments. In this work we describe the growth of thin films of carbon nitride by chemical vapor deposition (CVD) reactor. In this process, we will activate a mixture of methane/nitrogen or methane/ammonia either by a hot-filament or by microwave plasma. Under the “right” conditions, we expect to deposit carbon nitride films where the a-C3N4 and b-C3N4 – the ultra-hard phases of carbon nitride – are the dominant phases. In this presentation, we will specifically describe the design and construction of both a hot-filament and microwave assisted CVD reactor that has been used to deposit these films. Once deposited, the carbon nitride films will be characterized using electron microscopy, atomic force microscopy and x-ray diffraction.
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